Heterojunction Diodes Comprising p-Type Ultrananocrystalline Diamond Films Prepared by Coaxial Arc Plasma Deposition and n-Type Silicon Substrates

被引:17
|
作者
Katamune, Yuki [1 ]
Ohmagari, Shinya [1 ]
Al-Riyami, Sausan [1 ]
Takagi, Seishi [2 ]
Shaban, Mahmoud [3 ]
Yoshitake, Tsuyoshi [1 ]
机构
[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Kasuga, Fukuoka 8168580, Japan
[2] Kyushu Inst Technol, Fac Engn, Kitakyushu, Fukuoka 8048550, Japan
[3] Aswan Univ, Aswan Fac Engn, Dept Elect Engn, Aswan 81542, Egypt
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
NITROGEN; ELECTROLUMINESCENCE; RESONANCE; DEFECTS;
D O I
10.7567/JJAP.52.065801
中图分类号
O59 [应用物理学];
学科分类号
摘要
Heterojunction diodes, which comprise boron-doped p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films prepared by coaxial arc plasma deposition and n-type Si substrates, were electrically studied. The current-voltage characteristics showed a typical rectification action. An ideality factor of 3.7 in the forward-current implies that carrier transport is accompanied by some processes such as tunneling in addition to the generation-recombination process. From the capacitance-voltage measurements, the built-in potential was estimated to be approximately 0.6 eV, which is in agreement with that in a band diagram prepared on the assumption that carriers are transported in an a-C: H matrix in UNCD/a-C: H. Photodetection for 254nm monochromatic light, which is predominantly attributable to photocurrents generated in UNCD grains, was evidently confirmed in heterojunctions. Since dangling bonds are detectable by electron spin resonance spectroscopy, their control might be an important key for improving the rectifying action and photodetection performance. (C) 2013 The Japan Society of Applied Physics
引用
收藏
页数:5
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