Performance Evaluation of Various Semiconductor Technologies for Automotive Applications

被引:0
|
作者
Shamsi, Pourya [1 ]
McDonough, Matthew [1 ]
Ranjbar, Amir Hossein [1 ]
Fahimi, Babak [1 ]
机构
[1] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75083 USA
关键词
DEVICES;
D O I
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper evaluates the commercially available semiconductor switches for automotive applications. For this purpose, a conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with a Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Performance criteria for automotive drive systems are compared between the two switches. Electromagnetic interferences due to the switching times of the switches are studied. A test is performed to measure the actual power losses for both switches. Using the simulated model of the heatsink, the temperature of the junction for each switch is estimated. Afterwards, the results are compared with the data provided in the technical documents of the switches.
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页码:3061 / 3066
页数:6
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