Current Status and Future Challenge of Oxide Semiconductors

被引：0
|
作者：
Hosono, Hideo [1 ]
机构：
[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS | 2012年
关键词：
ROOM-TEMPERATURE FABRICATION; THIN-FILM TRANSISTORS; DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes my personal view on several hot issues in oxide semiconductors for AM-FPD applications. Topics to be discussed are origin and mechanism for negative bias illumination stress (NBIS) instability of a-IGZO-TFTs, impurity effects, down-sized TFTs and bipolar oxide TFTs. I propose a model for explaining the origin, depth distribution of the large subgap state density above the conduction band maximum. Importance of oxide semiconductors with a small indirect gap is addresses to realize c-MOS based on the band alignment of SnO which was demonstrated to operate as a bipolar TFT.
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页码：1 / 4
页数：4
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