Thickness dependence of dielectric constant in barium strontium titanate thin films

被引：0
|
作者：
Panda, B [1 ]
Nigam, GD [1 ]
Ray, SK [1 ]
机构：
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1999年 / 37卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon Si/SiO2/Ti/TiN/Pt substrate. The structural and electrical properties have been investigated using X-ray diffraction and capacitance-voltage characteristics of fabricated capacitors. The growth and orientation of the film have been found to depend upon the type of substrates and deposition temperatures. The effective dielectric constant of BST film in Si/SiO2/Ti/TiN/Pt/BST/Al thin film capacitor is found to increase with the increasing thickness of the film. A space charge layer with low dielectric constant is found to form at the film electrode interface.
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页码：318 / 320
页数：3
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