Magnetic and Magnetotransport Properties of Diluted Magnetic Semiconductor (Ga,Mn)Sb Crystals

被引：17
|
作者：
Ganesan, K. [1 ]
Bhat, H. L. [1 ]
机构：
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
来源：
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2008年 / 21卷 / 07期
关键词：
GaMnSb; Ferromagnetic semiconductors; Magnetization; Anomalous Hall effect; Horizontal Bridgman method; Ferromagnetic-semiconductor hybrid system; 75; 50; Pp; 72; 80; Ey; 47; -m; 81; 10; Fq; 60; -d; 85;
D O I：
10.1007/s10948-008-0341-0
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the magnetic and magnetotransport properties of Ga1-x Mn (x) Sb crystals grown with different Mn doping concentrations (x=0.01, 0.02, 0.03 and 0.04) by the horizontal Bridgman technique. A systematic reduction in lattice parameter with increase in Mn concentration is observed through X-ray diffraction studies. The crystals show negative magnetoresistance and anomalous Hall effect below 10 K. Anomalous Hall coefficient is negative and decreases with increasing Mn concentration. Temperature dependence on magnetization measurement shows a magnetic ordering below 10 K which could arise from GaMnSb alloy formation. Also, ferromagnetism is observed till room temperature due to the presence of MnSb clusters. Existence of MnSb clusters is verified through scanning electron microscopy. The carrier concentration increases with Mn doping and this results in decrease of resistivity. The observed magnetic and transport properties indicate the presence of ferromagnetic phase below 10 K in the studied system.
引用
收藏
页码：391 / 397
页数：7
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