Charge Berezinskii-Kosterlitz-Thouless transition in superconducting NbTiN films

被引:24
|
作者
Mironov, Alexey Yu. [1 ,2 ]
Silevitch, Daniel M. [5 ]
Proslier, Thomas [6 ]
Postolova, Svetlana V. [1 ,2 ]
Burdastyh, Maria V. [1 ,2 ]
Gutakovskii, Anton K. [1 ,2 ]
Rosenbaum, Thomas F. [5 ]
Vinokur, Valerii V. [7 ,8 ]
Baturina, Tatyana I. [1 ,2 ,3 ,4 ,9 ,10 ]
机构
[1] AV Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentjev Ave, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Pirogova Str 2, Novosibirsk 630090, Russia
[3] Univ Chicago, James Franck Inst, 5640 S Ellis Ave, Chicago, IL 60637 USA
[4] Univ Chicago, Dept Phys, Chicago, IL 60637 USA
[5] CALTECH, Div Phys Math & Astron, Pasadena, CA 91125 USA
[6] Commissariat Energie Atom & Energies Renouvelable, Inst Rech Fundamentales Univers, Gif Sur Yvette, France
[7] Argonne Natl Lab, Mat Sci Div, 9700 S Cass Ave, Argonne, IL 60439 USA
[8] Univ Chicago, Computat Inst, 5735 S Ellis Ave, Chicago, IL 60637 USA
[9] Univ Autonoma Madrid, Dept Fis Mat Condensada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
[10] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain
来源
SCIENTIFIC REPORTS | 2018年 / 8卷
基金
俄罗斯科学基金会; 美国国家科学基金会;
关键词
METAL-INSULATOR-TRANSITION; JOSEPHSON-JUNCTION ARRAYS; ATOMIC LAYER DEPOSITION; UNIVERSAL RESISTANCE; 2-DIMENSIONAL ARRAYS; PHASE-TRANSITIONS; DUALITY; VISCOSITY; SYMMETRY;
D O I
10.1038/s41598-018-22451-1
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Three decades after the prediction of charge-vortex duality in the critical vicinity of the two-dimensional superconductor-insulator transition (SIT), one of the fundamental implications of this duality-the charge Berezinskii-Kosterlitz-Thouless (BKT) transition that should occur on the insulating side of the SIT-has remained unobserved. The dual picture of the process points to the existence of a superinsulating state endowed with zero conductance at finite temperature. Here, we report the observation of the charge BKT transition on the insulating side of the SIT in 10 nm thick NbTiN films, identified by the BKT critical behavior of the temperature and magnetic field dependent resistance, and map out the magnetic-field dependence of the critical temperature of the charge BKT transition. Finally, we ascertain the effects of the finite electrostatic screening length and its divergence at the magnetic field-tuned approach to the superconductor-insulator transition.
引用
收藏
页数:11
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