EFFECT OF CURRENT DENSITY ON STRUCTURAL AND OPTICAL PROPERTIES OF In DOPED ZnO THIN FILMS GROWN ON COPPER SUBSTRATE BY ELECTRODEPOSITION METHOD

In doped ZnO thin films have been grown on copper substrates from acidic zinc oxide solution by Potentiostat-Galvanostat electrolysis process. The crystal structure and surface morphology of the as-grown films have been investigated by X-ray powder diffraction (XRD), Fourier transform infrared spectra (FTIR), UV-Vis absorbance spectra and Scanning electron microscopy (SEM). The results of XRD and FTIR analyses have confirmed the formation of hexagonal wurtzite structure of In doped ZnO. Particle size is found to increase from 20nm to 33nm with current densities. The SEM results have indicated the porous surface characteristic of the films. The optical band gap value is found to vary from 3.40 eV to 3.60 eV with current density which results increase in particle size.