Valley-selective directional emission from a transition-metal dichalcogenide monolayer mediated by a plasmonic nanoantenna

被引:24
|
作者
Chen, Haitao [1 ,2 ]
Liu, Mingkai [1 ]
Xu, Lei [1 ]
Neshev, Dragomir N. [1 ]
机构
[1] Australian Natl Univ, Res Sch Phys & Engn, Nonlinear Phys Ctr, Canberra, ACT 2601, Australia
[2] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Hunan, Peoples R China
来源
基金
澳大利亚研究理事会;
关键词
2D materials; multipolar emission; nanoantenna; plasmonic; transition-metal dichalcogenides; valley polarization; SPIN; MOS2; OPTOELECTRONICS; INTERFERENCE; POLARIZATION; ELECTRONICS;
D O I
10.3762/bjnano.9.71
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Background: Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) with intrinsically crystal inversion-symmetry breaking have shown many advanced optical properties. In particular, the valley polarization in 2D TMDCs that can be addressed optically has inspired new physical phenomena and great potential applications in valleytronics. Results: Here, we propose a TMDC-nanoantenna system that could effectively enhance and direct emission from the two valleys in TMDCs into diametrically opposite directions. By mimicking the emission from each valley of the monolayer of WSe2 as a chiral point-dipole emitter, we demonstrate numerically that the emission from different valleys is directed into opposite directions when coupling to a double-bar plasmonic nanoantenna. The directionality derives from the interference between the dipole and quadrupole modes excited in the two bars, respectively. Thus, we could tune the emission direction from the proposed TMDC-nanoantenna system by tuning the pumping without changing the antenna structure. Furthermore, we discuss the general principles and the opportunities to improve the average performance of the nanoantenna structure. Conclusion: The scheme we propose here can potentially serve as an important component for valley-based applications, such as non-volatile information storage and processing.
引用
收藏
页码:780 / 788
页数:9
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