High-performance EUV multilayer optics

The demand for enhanced optical resolution in order to structure and observe ever smaller details has pushed optics development in recent years. There is increasing interest in optical components for the extreme ultraviolet (EUV) spectral region mainly as a result of the production of more powerful electronic circuits with the aid of projection lithography. Due to absorption at wavelengths below 100 nm the penetration depth of EUV radiation into matter is only a few nanometers. Hence, reflective optics must be used for imaging and light collection such as EUV multilayer mirrors which consist of alternating thin films with different refractive indices. This basic idea can be compared to the classic, high reflective lambda/4 systems: the constructive interference of all beams reflected at the film interfaces. At Fraunhofer IOF Jena multilayer optics development cover the full range between the soft X-rays around 2 nm wave-length and the vacuum ultraviolet. However, the paper will focus on multilayer optics for EUV lithography applications at 13.5 nm. Besides the development of high-reflective multilayers; with enhanced thermal and radiation stability using interface engineering and optimized capping layers collector and imaging optics for diverse applications in the EUV spectral range have been realized. The deposition of EUV collector mirrors for high-power laser produced plasma (LPP) sources is discussed. The paper summarizes recent progress and the present knowledge in preparation and characterization of multilayer optics for the EUV spectral range with regard to maximum optical performance, minimization of structure imperfections, reduction of residual stresses as well as enhanced thermal and radiation stability.