Optimization of GaN-Based Ultra-Low Power Boost Converter in Far-Field Energy Harvesting

被引：0
|
作者：
Bouler, Douglas W., III [1 ]
Baxter, Jared [1 ]
Costinett, Daniel [1 ]
机构：
[1] Univ Tennessee Knoxville, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA
来源：
IEEE PELS WORKSHOP ON EMERGING TECHNOLOGIES: WIRELESS POWER (2016 WOW) | 2016年
关键词：
GaN; wireless power transfer; far-field WPT; GaNFET; Figure of Merit (FOM); optimization; RF energy harvesting; low power;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a method of optimizing low power boost converters for use in far-field wireless energy harvesting systems. This method uses a database of manufacturer-provided device characteristics of both Silicon and GaN FETs to construct Figures of Merit (FOMs) used for evaluating device technologies for power loss based on boost converter parameters. A loss model is constructed for predicting device power losses and system efficiency over a wide range of operating points. Using the analysis framework, an asynchronous boost converter is constructed and experimentally verified with operation as low as 10 mu W with a peak efficiency of 74% at an input power of 300 mu W.
引用
收藏
页码：231 / 237
页数：7
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