Ultrafast parallel random number generation with a chip-scale semiconductor laser

被引：0

作者：

Kim, Kyungduk ^{[1
]}

Bittner, Stefan ^{[2
]}

Zeng, Yongquan ^{[3
]}

Guazzotti, Stefano ^{[4
,5
]}

Hess, Ortwin ^{[4
,5
]}

Wang, Qi Jie ^{[3
]}

Cao, Hui ^{[1
]}

机构：

[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[2] Cent Supelec, Chair Photon, Metz, France

[3] Nanyang Technol Univ, Ctr OptoElect & Biophoton, Singapore, Singapore

[4] Trinity Coll Dublin, Sch Phys, Dublin, Ireland

[5] Trinity Coll Dublin, CRANN Inst, Dublin, Ireland

来源：

2021 ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2021年

关键词：

Broad-area semiconductor lasers; Laser instability; Random number generation;

D O I：

10.1109/IPC48725.2021.9592862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spatiotemporal interference of numerous lasing modes in a specially designed cavity accelerates random bit generation in hundreds of spatial channels. The accumulative bit rate reaches 250 Terabit/s, two orders of magnitude higher than the state-of-the-art.

引用

页数：2

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