High-field quasiballistic transport in short carbon nanotubes

被引:477
|
作者
Javey, A [1 ]
Guo, J
Paulsson, M
Wang, Q
Mann, D
Lundstrom, M
Dai, HJ
机构
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[2] Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA
[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.92.106804
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Single walled carbon nanotubes with Pd Ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean-free path (MFP) for acoustic phonon scattering is estimated to be l(ap)similar to300 nm, and that for optical phonon scattering is l(op)similar to15 nm. Transport through very short (similar to10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasiballistic at the low- and high-bias voltage limits, respectively. High currents of up to 70 muA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects.
引用
收藏
页码:106804 / 1
页数:4
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