The influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology

The statistical design of experiment technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. Two-level screening experiment with 2(3) factorial design was used to evaluate three process variables in eight combination runs. The factors were implantation dose of BF2 and Ar, drive-in temperature and drive-in time. The analysis of variance was used to analyze the data and we found that all main variables were important for arsenic implanted wafer and only drive-in temperature factor was important for boron implanted wafer. We also discovered that there was no significant interaction between the factors. For arsenic implanted wafers, which were drive-in at 950 degrees C, the measured sheet resistance were at between 110 and 130 Omega/ while the wafers which were drive, in at 850 degrees C, the sheet resistance were measured between 60 and 90 Omega/. For boron implanted wafers, the measured sheet resistance values were found constant at about 30 Omega/ regardless of drive-in temperature. The experimental data were used by regression equation to model out the sheet resistance. By this, we have illustrated about how the statistical design of experiment methodology can be effectively used in order to control the process performance.