High-efficiency BIRA for embedded memories with a high repair rate and low area overhead

被引：3
|
作者：
Lee, Joohwan [1 ,2 ]
Park, Kihyun [1 ,2 ]
Kang, Sungho [1 ,3 ]
机构：
[1] Yonsei Univ, Grad Sch Elect & Elect Engn, Seoul 120749, South Korea
[2] Yonsei Univ, ASIC Res Ctr, Seoul 120749, South Korea
[3] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2012年 / 12卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Built-in redundancy analysis; repair rate; area overhead; embedded memory;
D O I：
10.5573/JSTS.2012.12.3.266
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-efficiency built-in redundancy analysis (BIRA) is presented. The proposed BIRA uses three techniques to achieve a high repair rate using spare mapping registers with adjustable fault tags to reduce area overhead. Simulation results show that the proposed BIRA is a reasonable solution for embedded memories.
引用
收藏
页码：266 / 269
页数：4
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