W-band RF MEMS double and triple-stub impedance tuners

被引：25
|
作者：
Vähä-Heikkilä, T [1 ]
Varis, J [1 ]
Tuovinen, J [1 ]
Rebeiz, GM [1 ]
机构：
[1] Univ Michigan, Ann Arbor, MI 48109 USA
来源：
2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年
关键词：
RF MEMS; impedance tuner; matching network; noise parameter; load-pull; on-wafer;
D O I：
10.1109/MWSYM.2005.1516774
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2(11)) different impedances. Measured vertical bar Gamma(MAX)vertical bar for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
引用
收藏
页码：923 / 926
页数：4
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