Porous silicon-based sensors: Prospects and challenges

被引：11

作者：

Saha, H. ^{[1
]}

Pramanik, C. ^{[1
]}

机构：

[1] Jadavpur Univ, IC Design & Fabricat Ctr, Dept Elect & Telecommun Engn, Kolkata 700032, W Bengal, India

来源：

MATERIALS AND MANUFACTURING PROCESSES | 2006年 / 21卷 / 03期

关键词：

contact problem; doping difficulty; FPGA; high resistivity; instability; MEMS; nanocrystalline; nonuniformity; phase detection electronics; porous silicon; pressure sensors; signal conditioning; SMART sensor; vapor sensors;

D O I：

10.1080/10426910500464461

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper the various applications of porous silicon as sensors, namely vapor and pressure sensors, have been discussed. The advantages of the porous silicon sensors over existing sensors have also been indicated. Suitable signal conditioning schemes for porous silicon based sensors using discrete circuits and its corresponding FPGA implementation have been discussed. Finally, the challenges of commercialization of the porous silicon based sensors have also been highlighted.

引用

页码：239 / 246

页数：8

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