Growth and magnetic properties of epitaxial MnAs thin films grown on InP(001)

被引：19
|
作者：
Yokoyama, M
Ohya, S
Tanaka, M
机构：
[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期
基金：
日本科学技术振兴机构; 日本学术振兴会;
关键词：
D O I：
10.1063/1.2159098
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial ferromagnetic MnAs thin films have been grown by molecular-beam epitaxy on semi-insulating InP(001) substrates. The MnAs c axis (MnAs[0001]) lies along the InP[110] axis, and the easy magnetization axis is in-plane, along the MnAs[1120] axis, which is parallel to the InP[110] axis. The ferromagnetic transition temperature of the MnAs films on InP(001) was estimated to be 321 K. The structural and magnetic properties of MnAs thin films grown on InP(001) substrates are similar to those of type-A MnAs films grown on GaAs(001) substrates. The feasibility of growing monocrystalline ferromagnetic layers on InP(001) will open up the possibility of monolithic integration of magnetic functions with InP-based optoelectronics devices. (c) 2006 American Institute of Physics.
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