Influence of Carrier Transport on Diffraction Efficiency of Steady-State Photocarrier Grating

被引:0
|
作者
Sun, Q. M. [1 ]
Wang, Y. F. [1 ]
Gao, C. M. [1 ]
Cui, H. [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
Carrier transport; Diffraction efficiency; Rigorous coupled-wave analysis; Steady-state photocarrier grating; DIFFUSION-LENGTH MEASUREMENT; COUPLED-WAVE ANALYSIS; SILICON; IMPLEMENTATION; GAAS;
D O I
10.1007/s10765-014-1813-z
中图分类号
O414.1 [热力学];
学科分类号
摘要
A two-dimensional theoretical model of a diffractive steady-state photocarrier grating (SSPCG) has been developed. The carrier diffusion equation with a spatially periodic excitation source was solved, and an analytical expression of the carrier density distribution was obtained. Based on the band-filling theory and the Kramers-Kronig relation, the carrier-induced refractive index change of SSPCG was estimated, and the refractive index profile was determined. The diffraction efficiency of the SSPCG was calculated by multilevel rigorous coupled-wave analysis. Simulations were carried out to investigate the influence of the carrier transport properties on the diffraction efficiency of the SSPCG. The results show that a semiconductor material with a longer lifetime and a smaller diffusivity will have a higher diffraction efficiency. The spatial amplitude of the carrier density and the grating strength of the SSPCG are closely related to the grating period. For an InP-based SSPCG, the diffraction efficiency of the transmitted wave reaches its maximum value (25 %) when the grating provides a phase shift. The theoretical analysis and conclusions are helpful for material selection and experimental parameter determination of a diffractive SSPCG.
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页码:1029 / 1036
页数:8
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