Electrical conductivity and band structure of thin polycrystalline EuS films

被引：11
|
作者：
Kaminskii, V. V. [1 ]
Stepanov, N. N. [1 ]
Kazanin, M. M. [1 ]
Molodykh, A. A. [1 ]
Solov'ev, S. M. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PHYSICS OF THE SOLID STATE | 2013年 / 55卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
Hydrostatic Compression; Conduction Band Bottom; Thin Polycrystalline; Electrical Resis Tance; Regular Lattice Site;
D O I：
10.1134/S1063783413050156
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study of the electrical resistance of thin polycrystalline EuS films (0.4-0.8 mu m thick) in the temperature range 120-480 K has provided the basis for a model of the band structure of this substance. It has been shown that the main impurity levels in thin polycrystalline EuS films are those related with localized states near the conduction band bottom, as well as the E (i) donor levels of Eu ions outside regular lattice sites. The "tail" of the localized states extends in energy up to at least -0.45 eV.
引用
收藏
页码：1074 / 1077
页数：4
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