Surface plasmon resonance-induced color-selective Au-peapodded silica nanowire photodetectors with high photoconductive gain

被引:13
|
作者
Wang, Sheng-Bo [1 ]
Chen, Ruei-San [2 ]
Chang, Shoou Jinn [1 ]
Han, Hsieh-Cheng [3 ]
Hu, Ming-Shien [3 ]
Chen, Kuei-Hsien [3 ,4 ]
Chen, Li-Chyong [4 ]
机构
[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect,Dept Elect Engn, Tainan 701, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, Taipei 106, Taiwan
[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
[4] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
关键词
D O I
10.1039/c3nr04533a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the optoelectronic device properties of individual Au-silica hybrid nanowires prepared by microwave plasma enhanced chemical vapor deposition. Due to the surface plasmon resonance (SPR) effect the photo-responsivity peak strongly depends on the shape of the embedded gold nanostructures in the silica nanowire in which the shape can be modified by controlling the growth time of Au-silica nanowires. Finite difference time domain (FDTD) simulation shows that the electric field distribution profiles of Au-silica hybrid nanowires support the photo-responsivity spectrum results. The photo-detector performance of the Au-NPs@silica nanowire is investigated. The single Au-NPs@silica nanowire exhibits unique photo-responsivity in the visible range (500 nm), high selectivity, high photoconductive gain, and very fast rise (141 mu s) and decay (298 ms) time constants. Furthermore, the mechanism for the high photoconductive gain is also discussed. This result implies that the Au-NPs@silica nanowire can be applied for future nanoscale optoelectronic devices.
引用
收藏
页码:1264 / 1270
页数:7
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