Topological Insulator: Bi2Te3 Saturable Absorber for the Passive Q-Switching Operation of an in-Band Pumped 1645-nm Er:YAG Ceramic Laser

被引：156

作者：

Tang, Pinghua ^{[1
]}

Zhang, Xiaoqi ^{[2
]}

Zhao, Chujun ^{[1
]}

Wang, Yong ^{[3
]}

Zhang, Han ^{[1
]}

Shen, Deyuan ^{[4
]}

Wen, Shuangchun ^{[1
]}

Tang, Dingyuan ^{[3
]}

Fan, Dianyuan ^{[2
]}

机构：

[1] Hunan Univ, Coll Phys & Microelect Sci, Minist Educ, Key Lab Micro Nanooptoelect Devices, Changsha 410082, Hunan, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[3] Jiangsu Normal Univ, Sch Phys & Elect Engn, Xuzhou 221116, Peoples R China

[4] Fudan Univ, Minist Educ, Dept Opt Sci & Engn, Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peoples R China

来源：

IEEE PHOTONICS JOURNAL | 2013年 / 5卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Topological insulator; Q-switching (Q-S); Er:YAG; ceramic laser; DOPED FIBER LASER; HIGHLY EFFICIENT; MODE-LOCKING; NARROW-LINEWIDTH; GRAPHENE; ER; OUTPUT; BI2SE3;

D O I：

10.1109/JPHOT.2013.2250494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An in-band pumped 1.645-mu m Er:YAG ceramic laser passively Q-switched by a topological insulator: Bi2Te3 saturable absorber is reported. The average output power could reach up to 210 mW, corresponding to a pulsewidth, a pulse repetition rate, and a per-pulse energy of 6.3 mu s, 40.7 kHz, and 5.3 mu J, respectively. This result indicates that the topological insulator: Bi2Te3 could be a promising saturable absorber such as graphene, with potential applications for solid-state lasers.

引用

页数：7

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