Intervalley gap anomaly of two-dimensional electrons in silicon - art. no. 076805

被引:21
|
作者
Lai, K [1 ]
Pan, W
Tsui, DC
Lyon, S
Mühlberger, M
Schäffler, F
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria
关键词
D O I
10.1103/PhysRevLett.96.076805
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report here a systematic study of the energy gaps at the odd-integer quantum Hall states nu=3 and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley splitting is independent of the in-plane B fields. However, the nu=3 valley gap differs by about a factor of 3 (Delta(v)similar to 0.4 vs 1.2 K) on different sides of the coincidence. More surprisingly, instead of reducing to zero, the energy gaps at nu=3 and 5 rise rapidly when approaching the coincidence angles. We believe that such an anomaly is related to strong couplings of the nearly degenerate Landau levels.
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页码:1 / 4
页数:4
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