Effect of oxidation on the thermoelectric properties of PbSe thin films

被引：22

作者：

Rogacheva, EI ^{[1
]}

Tavrina, TV

Grigorov, SN

Nashchenkina, ON

Volobuev, VV

Fedorov, AG

Nasedkin, KA

Dresselhaus, MS

机构：

[1] Natl Tech Univ, Kharkov Polytech Inst, UA-61002 Kharkov, Ukraine

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[3] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 04期

关键词：

PbSe; epitaxial films; oxidation; thickness; thermoelectric properties;

D O I：

10.1007/s11664-002-0147-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of oxidation at room temperature on the thermoelectric properties of PbSe/KCl (001) thin films prepared by thermal evaporation was investigated. The dependences of the electrical conductivity, the Hall coefficient, charge carrier mobility, and thermopower on the PbSe layer thickness (d=4-200 nm) were obtained. An inversion of the sign of the dominant carriers from n to p at dsimilar to80 nm was observed under decreasing d. The d dependences of the thermoelectric properties were interpreted, taking into consideration the oxidation processes at the film/air interface within the framework of models considering both n-type and p-type carriers.

引用

页码：298 / 303

页数：6

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