Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

被引：22
|
作者：
Zhernokletov, D. M. [1 ]
Dong, H. [2 ]
Brennan, B. [2 ]
Yakimov, M. [3 ]
Tokranov, V. [3 ]
Oktyabrsky, S. [3 ]
Kim, J. [2 ]
Wallace, R. M. [1 ,2 ]
机构：
[1] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[3] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 13期
基金：
美国国家科学基金会;
关键词：
OXIDE; PASSIVATION; COMPOUND; GAAS;
D O I：
10.1063/1.4800441
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO2 dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido) hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4800441]
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页数：5
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