PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF GALLIUM ON DIFFERENT SUBSTRATES FOR SILICON NANOWIRE SYNTHESIS

被引：0

作者：

Gewalt, Annika ^{[1
]}

Kalkofen, Bodo ^{[1
]}

Silinskas, Mindaugas ^{[1
]}

Lisker, Marco

Burte, Edmund P. ^{[1
]}

机构：

[1] Otto Von Guericke Univ, Inst Micro & Sensor Syst, Fac Elect Engn & Informat Technol, D-39106 Magdeburg, Germany

来源：

3RD INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2010 | 2010年

关键词：

PECVD; gallium; silicon nanowires; titanium molybdenum; silver;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nanowires (NWs) were synthesized with assistance of Ga islands as growth mediator using a vapor-liquid-solid mechanism (VLS) modified by plasma enhanced chemical vapor deposition (PECVD). Besides bare silicon wafers with (111) and (100) orientation, silver and titanium molybdenum coated silicon substrates were used as samples. The as-deposited Ga islands and the subsequent synthesized Si NWs were studied by SEM, AFM and EDX, respectively. It could be observed that Si NWs were synthesized not only on bare silicon surfaces, but also on coated wafers. The wires grew directly from the prior deposited Ga islands.

引用

页码：266 / 269

页数：4

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