Visualization of Terahertz radiation on silicon-based CCD and CMOS sensor at high resolution

被引：0
|
作者：
Hauri, C. P. [1 ,2 ]
Shalaby, M. [1 ]
Vicario, C. [1 ]
机构：
[1] Paul Scherrer Inst, SwissFEL, CH-5232 Villigen, Switzerland
[2] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland
来源：
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low frequency THz radiation is visualized by means of a charged-coupled device designed for optical frequencies and a CMOS sensor. This technological advance opens novel opportunities in THz imaging as it offers smallest pixel size and large chip size at low cost. Furthermore the sensor is insensitivity to background noise and is able to detect radiation of multiple spectral ranges from x-rays to THz. This is particularly beneficial for spatial overlap finding in two-color pump probe experiments.
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