Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter

被引:0
|
作者
Gutierrez, A. [1 ]
Marcault, E. [1 ]
Alonso, C. [2 ]
Tremouilles, D. [2 ]
机构
[1] CEA, Tech Occitanie, 51 Rue Innovat, Labege, France
[2] LAAS, CNRS, 7 Ave Colonel Roche, Toulouse, France
关键词
GaN-HEMT; Boost converter; RL damper; Root trajectory; Switching losses;
D O I
10.23919/epe20ecceeurope43536.2020.9215645
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper analyzes a high-frequency GaN-based boost converter considering an RL damper to mitigate critical oscillations. This work aims contributing with graphical correlations between power converter signals and root trajectories of the characteristic equation in the main oscillation loop. Results provide insights about the RL damper design to improve the power converter performance. A technical contribution shows that the highest efficiency depends on the lowest L and the highest R of the RL damper able to produce a damping operation. Additionally, simulation results demonstrate the improvement of the GaN-HEMT operation and reliability using an RL damper in a boost converter topology. An experimental GaN-based boost converter validates the developed study.
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页数:8
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