Structural, optical and electrical characterization of chemically deposited CdSe thin films

被引:46
|
作者
Khomane, A. S. [1 ]
Hankare, P. P. [2 ]
机构
[1] Rajaram Coll, Dept Chem, Kolhapur 416004, Maharashtra, India
[2] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India
关键词
Thin films; Crystal growth; Thermo-electric; X-ray diffraction; Optical spectroscopy; Scanning electron microscopy; TEMPERATURE; GROWTH;
D O I
10.1016/j.jallcom.2009.09.122
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cadmium selenide (CdSe) thin films have been deposited on glass substrate. CdSe thin films were characterized by various techniques such as X-ray diffraction, scanning electron microscopy and UV-vis-NIR double beam spectrophotometer. The electrical and thermo-electrical properties are also studied. The X-ray diffraction analysis shows that the film samples are in cubic crystal structure. The optical band gap energy (Eg) was found to be 1.7 eV. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:605 / 608
页数:4
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