Synthesis and I-V properties of aligned copper nanowires

被引：38
|
作者：
Cao, HQ [1 ]
Wang, LD [1 ]
Qiu, Y [1 ]
Zhang, L [1 ]
机构：
[1] Tsing Hua Univ, Dept Chem, Key Lab Organ Optoelect & Mol Engn, Minist Educ, Beijing 100084, Peoples R China
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 06期
关键词：
D O I：
10.1088/0957-4484/17/6/032
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper reports the synthesis of well-aligned copper nanowires using an electrochemical deposition template technique. The electrical properties of copper nanowire arrays synthesized within vertical pores of alumina template were measured using a current-sensing atomic force microscope (AFM), with bias voltage applied between the AFM tip and the gold back-electrode. Nonlinear current-voltage (I-V) characteristics of copper nanowire arrays are observed; this is attributed to the impurities near the wire-lead contact region. These vertical copper nanowire arrays are suitable for use in fabricating nanoelectronic devices.
引用
收藏
页码：1736 / 1739
页数：4
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