Structural and optical properties of (Al, K)-co-doped ZnO thin films deposited by a sol-gel technique

被引:32
|
作者
Xu, Jianping [1 ,2 ]
Shi, Shaobo [3 ]
Zhang, Xiaosong [1 ]
Wang, Youwei [1 ]
Zhu, Mingxue [1 ]
Li, Lan [1 ]
机构
[1] Tianjin Univ Technol, Inst Mat Phys, Key Lab Display Mat & Photoelect Devices, Minist Educ, Tianjin 300384, Peoples R China
[2] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Tianjin Univ Technol & Educ, Sch Sci, Tianjin 300222, Peoples R China
基金
美国国家科学基金会;
关键词
ZnO films; Donor-acceptor co-doping; Optical properties; Defects; LOW-TEMPERATURE SYNTHESIS; AL; LUMINESCENCE; PHOTOLUMINESCENCE; LI;
D O I
10.1016/j.mssp.2012.12.016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin films of Al-doped ZnO (AZO) and (Al, K)-co-doped ZnO (AKZO) were synthesized by sol-gel spin coating and their structural and optical properties were investigated. All the films had a preferential orientation in which the c-axis was perpendicular to the substrate. The optical bandgap increased after Al doping, but decreased after K doping at a given Al doping concentration. UV emission and a broad visible emission band were observed in photoluminescence (PL) spectra. The intensity of both emission bands decreased after Al and K co-doping. PL excitation (PLE) spectra of the blue emission band indicate that the initial state is possibly the same for all the samples and a similar case occurs for the orange-red emission band. The green emission can be attributed to electronic transitions involving oxygen vacancies. A possible process for the orange-red emission of the thin films is radiative recombination of an electron trapped in a zinc interstitial defect with a hole deeply trapped in interstitial oxygen. Crown Copyright (C) 2013 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:732 / 737
页数:6
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