TiO2/SiOx core-shell nanowires generated by heating the multilayered substrates

被引:5
|
作者
Na, Han Gil [1 ]
Kwak, Dong Sub [1 ]
Kwon, Yong Jung [1 ]
Cho, Hong Yeon [1 ]
Lee, Chongmu [2 ]
Kim, Hyoun Woo [1 ]
机构
[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
[2] Inha Univ, Div Mat Sci & Engn, Inchon 402751, South Korea
基金
新加坡国家研究基金会;
关键词
semiconductors; optical properties; transmission electron microscopy; scanning electron microscopy; nanostructured materials; AMORPHOUS SILICA NANOWIRES; SENSITIZED SOLAR-CELLS; TIO2; NANOWIRES; THERMAL EVAPORATION; SEMICONDUCTOR NANOCRYSTALS; ELECTRONIC-STRUCTURE; COAXIAL NANOCABLES; CARBON NANOTUBES; FIELD-EMISSION; SIO2; NANOTUBES;
D O I
10.1007/s12540-013-4030-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By heating Au/TiN/Si substrates, we fabricated TiO2/SiOx core-shell nanowires. By changing the thickness of predeposited Au layers, we demonstrated that the thickness of the Au layer needs to be optimized to obtain nanowires. High-resolution transmission electron microscopy image, X-ray diffraction spectrum, and selected area electron diffraction pattern coincidentally revealed that the resultant core nanowires had a tetragonal rutile structure of TiO2, and the shell was comprised of amorphous SiOx. The dominant growth mechanism was a base-growth mode, in which Au played a catalytic role, resulting in morphological changes with variation of the Au layer thickness. The TiO2/SiOx core-shell nanowires exhibited a broad photoluminescence emission band, which comprised four peaks centered at 1.54, 2.34, 2.67, and 2.99 eV, respectively. We expected that the 1.54 eV- and 2.34 eV-centered peaks arised from the TiO2 core, whereas the 2.67 eV- and 2.34 eV-peaks were ascribed to both the TiO2 core and the SiOx shell.
引用
收藏
页码:861 / 867
页数:7
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