Nanocrystallization in Si:H and quantum size effect on optical gap

Interruption of growth and II-plasma exposure on stacking layers of SI:H film resulted in a remarkable change in material properties. Widening of optical gap and increase in dark conductivity were simultaneous with the reduction in photoconductivity, bonded hydrogen content and optical absorption. An associated change in the network structure from amorphous towards crystalline was observed. Enhanced dose of plasma exposure resulted in the gradual lowering in the size of nanograins and increase in their number density. Systematic widening in optical gap during dehydrogenation of the network appears to be a unique feature related to amorphous semiconductors, which suggests nanocrystallization and quantum size effect in hydrogenated binary alloy.