Catalytic synthesis of large-scale GaN nanorods

被引：3
|
作者：
Chen, Jinhua [1 ]
Xue, Chengshan [1 ]
Zhuang, Huizhao [1 ]
Qin, Lixia [1 ]
Li, Hong [1 ]
Yang, Zhaozhu [1 ]
Zhang, Dongdong [1 ]
机构：
[1] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 2008年 / 43卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Nanostructures; Sputtering; X-ray diffraction; Crystal structure;
D O I：
10.1016/j.materresbull.2007.12.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel rare earth metal seed was employed as the catalyst for the growth of GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(l 1 1) substrates. Scanning electron microscopy, Xray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy were used to characterize the structure, morphology, and composition of the samples. The results demonstrate that the nanorods are high-quality single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanorods is also discussed.
引用
收藏
页码：2974 / 2978
页数：5
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