Electron-impact ionization of the Si atom

被引：3
|
作者：
Loch, S. D. [1 ]
Favreau, C. J. [1 ]
Pindzola, M. S. [1 ]
机构：
[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
来源：
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS | 2019年 / 52卷 / 05期
基金：
美国国家航空航天局;
关键词：
ionization; atom; autoionization; SILICON;
D O I：
10.1088/1361-6455/ab0129
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Electron-impact ionization cross sections are calculated for the ground configuration of the Si atom for application in erosion diagnostics of plasma facing components in magnetically confined fusion experiments. The single ionization cross sections include contributions from outer subshell direct ionization and excitation-autoionization. The dominant direct ionization cross sections are calculated using a non-perturbative time-dependent close-coupling method. A significant reduction in the direct ionization cross section is found when compared to perturbative distorted-wave results. The theoretical cross sections are compared with available crossed-beams measurements.
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页数：6
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