Mossbauer study of Fe in 3C-SiC following 57Mn implantation

被引：4
|
作者：
Bharuth-Ram, K. [1 ,2 ]
Gunnlaugsson, H. P. [3 ]
Mantovan, R. [4 ]
Naicker, V. V. [2 ]
Naidoo, D. [5 ]
Sielemann, R. [6 ]
Weyer, G. [3 ]
Aigne, Th. [7 ]
机构：
[1] iThemba Labs, ZA-7129 Somerset W, South Africa
[2] Univ KwaZulu Natal, Sch Phys, ZA-4041 Durban, South Africa
[3] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus, Denmark
[4] INFM, CNR, Lab Nazl MDM, I-20041 Agrate Brianza, MI, Italy
[5] Univ Witwatersrand, Sch Phys, ZA-2050 Wits, South Africa
[6] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[7] CERN, Div EP, CH-1211 Geneva 23, Switzerland
来源：
HYPERFINE INTERACTIONS | 2008年 / 184卷 / 1-3期
基金：
新加坡国家研究基金会;
关键词：
3C-SiC; Mn-57; implantation; Mossbauer spectroscopy; Fe sites;
D O I：
10.1007/s10751-008-9791-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
Our investigations on substitutional and interstitial Fe in the group IV semiconductors, from Fe-57 Mossbauer measurements following Mn-57 implantation, have been continued with investigations in 3C-SiC. Mossbauer spectra were collected after implantation and measurement at temperatures from 300 to 905 K. Following comparison with Mossbauer parameters for Fe in Si, diamond and Ge, four Fe species are identified: two due to Fe in tetrahedral interstitial sites surrounded, respectively, by four C atoms (Fe-i.C) or four Si atoms (Fe-i,Fe-Si) and two to Fe in (or close to) defect free or implantation damaged substitutional sites. An annealing stage at 300-500 K is evident. Above 600 K the Fe-i,Fe-Si fraction decreases markedly, reaching close to zero intensity at 905 K. This is accompanied by a corresponding increase in the Fe-i,Fe-C fraction.
引用
收藏
页码：207 / 211
页数：5
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