A 5.25GHz 0.35um SiGeBiCMOS power amplifier for IEEE 802.11a Wireless LAN

被引：0
|
作者：
Xiao Lin [1 ]
Li, Wen-Yuan [1 ]
Wang, Zhi-Gong [1 ]
机构：
[1] SE Univ, Inst RF & OEICs, Nanjing 210096, Peoples R China
来源：
2008 GLOBAL SYMPOSIUM ON MILLIMETER WAVES | 2008年
关键词：
power amplifier; WLAN; SiGeBICMOS; PAE;
D O I：
暂无
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
A 5.25GHz linear power amplifier for Wireless LAN application has been realized in 0.35um SiGe BiCMOS technology. This paper presents a two-stage power amplifier operating at AB mode under a single supply of +3.3v. A current mirror bias circuit is integrated to improve the linearity, efficiency, gain of the power amplifier. The result of simulation shows that the output 1 dB compression point (OP1dB) is 26.3dBm, the saturated output power achieves 28.5dBm, the power added efficiency (PAE) at OP1dB is about 20%, and the small signal gain is 28.3dB at 3.3v supply voltage.
引用
收藏
页码：310 / 313
页数：4
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