Improved low voltage all cascode mirror current source using the DC level shifter

被引：0
|
作者：
Sendi, Mohammad Sadegh Eslampanah [1 ]
Gatabi, Iman Rezanejad [1 ]
机构：
[1] KN Toosi Univ Tech, Dept Elect Engn, Tehran, Iran
来源：
2007 50TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the implementation of the so-called "DC level shifter" to obtain a low voltage, high bandwidth (200 MHz), high output resistance (11G Omega), low input resistance (0.005 Omega) and low settling time (24 nSec.) cascode current mirror. The characteristics of the proposed circuit was compared with the floating gate transistor technique numerically. The simulation results in 0.5um CMOS technology indicates the superiority of the proposed method than the floating gate technology.
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页码：144 / 145
页数：2
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