A Monte Carlo simulation study on growth mechanism of horizontal nanowires on crystal surface

被引:0
|
作者
Lan Mu [1 ]
Xiang Gang
Gu Gang-Xu
Zhang Xi
机构
[1] Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China
基金
中国国家自然科学基金;
关键词
Monte Carlo simulation; nanowire; quantum wire; growth mechanism;
D O I
10.7498/aps.61.228101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
With the kinetic Monte Carlo simulation of smooth (001) surface of symmetry-broken simple cubic crystal in fluid with low supersatuaration rate, the mechanism of nanowire growth based on crystal nuclei on the surface is discovered and the morphology of nanowire is obtained. The dependences of nanowire morphology on thermal roughness in the longitudinal and latitudinal direction and growth time on the anisotropic surface of the crystal are further discussed. The relations of nanowire growth rate with thermal roughness, supersaturation rate, surface size and diffusion rate on the surface are then systematically studied.
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页数:6
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