Integrated shadow mask method for patterning small molecule organic semiconductors

被引:36
|
作者
De Vusser, S
Steudel, S
Myny, K
Genoe, J
Heremans, P
机构
[1] IMEC, PME, MCP, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium
关键词
D O I
10.1063/1.2182008
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed a simple and efficient method for patterning small molecule semiconductors for applications in the field of organic electronics. In our approach, a profile is created using a single layer of photoresist, defining the regions where the organic semiconductor is to be deposited. Subsequent deposition of a small molecule semiconductor results in a discontinuity of the semiconductor film at the photoresist edge. The resulting transistor characteristics have an off current that is systematically below 1 pA. We demonstrate both p-type and n-type organic thin-film transistors using this method, using pentacene and copper hexadecafluorophthalocyanine (F16CuPc), respectively. (c) 2006 American Institute of Physics.
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页数:3
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