Dielectrical performance of high-k yttrium copper titanate thin films for electronic applications

被引:7
|
作者
Ameer, Zoobia [1 ,2 ,3 ]
Monteduro, Anna Grazia [1 ,2 ,4 ]
Rizzato, Silvia [1 ,2 ]
Caricato, Anna Paola [1 ,2 ]
Martino, Maurizio [1 ,2 ]
Lekshmi, I. C. [5 ]
Hazarika, Abhijit [6 ]
Choudhury, Debraj [6 ,7 ]
Mazzotta, Elisabetta [8 ]
Malitesta, Cosimino [8 ]
Tasco, Vittorianna [2 ]
Sarma, D. D. [6 ]
Maruccio, Giuseppe [1 ,2 ]
机构
[1] Univ Salento, Dept Math & Phys, Via Arnesano, I-73100 Lecce, Italy
[2] CNR, NANOTEC, Ist Nanotecnol, Via Arnesano, I-73100 Lecce, Italy
[3] Shaheed Banazir Bhutto Women Univ, Dept Phys, Univ Ave Charsadda Rd, Peshawar 25000, Pakistan
[4] Natl Inst Gastroenterol S De Bellis Res Hosp, Via Turi 27, I-70013 Bari, Italy
[5] CMR Inst Technol, Dept Chem, 132 AECS Layout,IT Pk Rd, Bengaluru 560037, India
[6] Indian Inst Sci, Solid State & Struct Chem Unit, Bengaluru 560012, Karnataka, India
[7] Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, W Bengal, India
[8] Univ Salento, Dipartimento Sci & Tecnol Biol & Ambientali DiSTe, Via Monteroni, I-73100 Lecce, Italy
关键词
RELAXATION; CONDUCTIVITY; LAYER;
D O I
10.1007/s10854-018-8696-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The increasing constraints in the miniaturization of modern electronic devices is driving the search for new high-k dielectric materials. Rare-earth transition metal oxides are very interesting because of the large values of dielectric constant observed in bulk samples. Here, we report on a comparison among the dielectric properties of yttrium copper titanate (YCTO) thin films and those of commonly used dielectrics such as SiO2 and MgO, grown in similar device structures. The YCTO permittivity was found to depend strongly on the oxygen pressure during deposition and can reach values even higher than those reported in bulk YCTO with good performances in terms of losses.
引用
收藏
页码:7090 / 7098
页数:9
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