Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxy

被引：17
|
作者：
Yamamoto, A
Kawamura, Y
Naito, H
Inoue, N
机构：
[1] Univ Osaka Prefecture, Adv Sci & Technol Res Inst, Sakai, Osaka 593, Japan
[2] Univ Osaka Prefecture, Coll Engn, Sakai, Osaka 593, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷
关键词：
hetero-structure; InGaAs GaAsSb; type II structure;
D O I：
10.1016/S0022-0248(98)01478-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 single hetero (SII) structures were grown by molecular beam epitaxy. It was found that the PL spectrum of the GaAsSb layers shows a remarkable dependence on the growth temperature and the V/III ratio. A sharp single-peak PL spectrum was obtained for the GaAsSb when the V/III ratio was 12.0 and the growth temperature was 505 degrees C. In addition, a below gap type II emission at 2.4-2.5 mu m was observed at 77 K for the InGaAs/GaAsSb SH structure for the first time. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：872 / 876
页数：5
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