Qualitative and quantitative analysis of stacking disorder in alpha- and beta-SiC by X-ray diffraction and structure modeling

被引：0

作者：

Palosz, B ^{[1
]}

Stelmakh, S ^{[1
]}

Gierlotka, S ^{[1
]}

机构：

[1] UNIPRESS,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND

来源：

COVALENT CERAMICS III - SCIENCE AND TECHNOLOGY OF NON-OXIDES | 1996年 / 410卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：235 / 240

页数：6

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