Electrical tuning of passive HTS microwave devices using single crystal strontium titanate

被引:2
|
作者
Wooldridge, I [1 ]
Turner, CW
Warburton, PA
Romans, EJ
机构
[1] Univ London Kings Coll, Dept Elect Engn, London WC2R 2LS, England
[2] Univ Strathclyde, Dept Phys & Appl Phys, Glasgow G4 0NG, Lanark, Scotland
关键词
D O I
10.1109/77.783714
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Over the last few years several groups have fabricated High Temperature Superconducting (BTS) thin film microwave devices which have included a ferroelectric thin film layer in their design. The electric field dependence of the ferroelectric promises desirable in-situ tuning of the frequency response. Here ne present the results of our experiments on the tuning of a coplanar HTS resonator using single crystal strontium titanate (STO). We have patterned a simple coplanar resonator device onto Y-Ba-Cu-O thin films deposited on (100) magnesium oxide substrates. Careful consideration of the size, position and biasing of these high permittivity STO crystals with respect to the planar device allo,vs us to minimise the perturbance to the plain; resonators response,whilst at the same time maximising the degree to which we are able to tune the device. We have also performed a series of capacitance measurements on our STO crystals to obtain reliable data for the dependence of the permittivity on temperature, applied bias and crystallographic orientation.
引用
收藏
页码:3220 / 3223
页数:4
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