Abnormal failure mechanism of the asymmetrical Emitter Turn-Off thyristor in high-frequency converters

被引：0
|
作者：
Xu, ZX [1 ]
Motto, K [1 ]
Huang, AQ [1 ]
机构：
[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
来源：
CONFERENCE RECORD OF THE 2001 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-4 | 2001年
关键词：
D O I：
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中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The Emitter Turn-Off thyristor (ETO) is a new MOS-controlled thyristor that is suitable for use in high-power converters due to its improved switching performance and easy control. This paper analyzes the abnormal failures related to the parasitic diode of the ETO in high-frequency converters for the first time. To prevent this failure, several solutions are proposed and improved ETOs are developed. Experimental results show that the proposed solutions can property solve this problem.
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页码：1504 / 1509
页数：6
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