Current-Voltage Characteristics of Top-Emission Printed EL Devices Using Solution-Processed ZnO Nanocrystals

被引：0
|
作者：
Kawasaki, H. [1 ]
Itatani, K. [1 ]
Toyama, T. [1 ]
Okamoto, H. [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan
来源：
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年
关键词：
LIGHT-EMITTING-DIODES; ELECTROLUMINESCENCE; PENTACENE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage (J-V) measurements were performed on the top-emission EL devices with a printed emission layer involving solution-processed ZnO nanocrystals. The temperature dependence of J-V characteristics suggested the deposition method and the deposition conditions of top anodes play a crucial role in determining UV emission intensity.
引用
收藏
页码：1045 / 1048
页数：4
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