Graphite Oxide under High Pressure: A Raman Spectroscopic Study

被引:50
|
作者
Xu, Lianqiang [1 ]
Cheng, Li [1 ]
机构
[1] Ningxia Teachers Univ, Sch Phys & Informat Technol, Ningxia 756000, Peoples R China
关键词
REDUCED GRAPHENE OXIDE; ELECTRONIC-STRUCTURE; CHEMICAL-REDUCTION; TRANSPARENT; FILMS;
D O I
10.1155/2013/731875
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We present a Raman-based study on the graphite oxide under high pressure. The graphite oxide is stable under hydrostatic high pressure ambient. By carefully fitting the D, G, and D'. bands which are merged at some extent, we successfully retrieve the information of peak position evolution of G band of graphite oxide under pressure, and it is found that the G band pressure coefficient is very close to that of graphene, and the pressure-induced peak position shift is reversible upon releasing the pressure. The Raman-based high pressure investigation indicates that the graphite oxide possesses good mechanical ductility despite the fact that it is oxygenated by functional groups. This study provides useful fundamental understanding of graphite oxide.
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收藏
页数:5
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