Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures

被引：0

作者：

Galtrey, Mark J. ^{[1
]}

Oliver, Rachel A. ^{[1
]}

Kappers, Menno J. ^{[1
]}

Humphreys, Colin ^{[1
]}

Stokes, Debbie J. ^{[2
]}

Clifton, Peter H. ^{[3
]}

Cerezo, Alfred ^{[4
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, England

[2] Univ Cambridge, Dept Phys, Cambridge CB3 0HE, England

[3] Oxford Nanosci, Kiln Farm, Milton Keynes, Bucks MK11 3ER, England

[4] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 | 2008年 / 120卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An InxGa1-xN/GaN multiple quantum well (MQW) structure that exhibited bright photoluminescence was examined with the three dimensional atom probe. The quantum wells were clearly imaged and the medium fraction, x, measured to be 0.19 +/- 0.01, was in good agreement with X-ray diffraction measurements. The distribution of indium in the MQWs was analysed: no evidence for either high indiurn concentration regions or indiurn clustering was found, in contrast with transmission electron microscopy studies in the literature. We conclude that indium Clustering is not necessary for bright luminescence in InGaN.

引用

页码：161 / +

页数：2

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