Artifacts in time-resolved Kelvin probe force microscopy

被引:10
|
作者
Sadewasser, Sascha [1 ]
Nicoara, Nicoleta [1 ]
Solares, Santiago D. [2 ]
机构
[1] Int Iberian Nanotechnol Lab, Av Mestre Jose Veiga S-N, P-4715330 Braga, Portugal
[2] George Washington Univ, Dept Mech & Aerosp Engn, 800 22nd St NW,Ste 3000, Washington, DC 20052 USA
来源
关键词
Kelvin probe force microscopy; time-resolved; CROSS-SECTION; SOLAR-CELLS; NANOSCALE; TRANSPORT; STATE;
D O I
10.3762/bjnano.9.119
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Kelvin probe force microscopy (KPFM) has been used for the characterization of metals, insulators, and semiconducting materials on the nanometer scale. Especially in semiconductors, the charge dynamics are of high interest. Recently, several techniques for time-resolved measurements with time resolution down to picoseconds have been developed, many times using a modulated excitation signal, e.g., light modulation or bias modulation that induces changes in the charge carrier distribution. For fast modulation frequencies, the KPFM controller measures an average surface potential, which contains information about the involved charge carrier dynamics. Here, we show that such measurements are prone to artifacts due to frequency mixing, by performing numerical dynamics simulations of the cantilever oscillation in KPFM subjected to a bias-modulated signal. For square bias pulses, the resulting time-dependent electrostatic forces are very complex and result in intricate mixing of frequencies that may, in some cases, have a component at the detection frequency, leading to falsified KPFM measurements. Additionally, we performed fast Fourier transform (FFT) analyses that match the results of the numerical dynamics simulations. Small differences are observed that can be attributed to transients and higher-order Fourier components, as a consequence of the intricate nature of the cantilever driving forces. These results are corroborated by experimental measurements on a model system. In the experimental case, additional artifacts are observed due to constructive or destructive interference of the bias modulation with the cantilever oscillation. Also, in the case of light modulation, we demonstrate artifacts due to unwanted illumination of the photodetector of the beam deflection detection system. Finally, guidelines for avoiding such artifacts are given.
引用
收藏
页码:1272 / 1281
页数:10
相关论文
共 50 条
  • [1] Local carrier dynamics in organic thin film transistors investigated by time-resolved Kelvin probe force microscopy
    Yamagishi, Yuji
    Kobayashi, Kei
    Kimura, Tomoharu
    Noda, Kei
    Yamada, Hirofumi
    ORGANIC ELECTRONICS, 2018, 57 : 118 - 122
  • [2] Preventing probe induced topography correlated artifacts in Kelvin Probe Force Microscopy
    Polak, Leo
    Wijngaarden, Rinke J.
    ULTRAMICROSCOPY, 2016, 171 : 158 - 165
  • [3] Investigation of the dynamic properties of on-chip coupled piezo/photodiodes by time-resolved atomic force and Kelvin probe microscopy
    Luiten, Willemijn M.
    van der Werf, Verena M.
    Raza, Noureen
    Saive, Rebecca
    AIP ADVANCES, 2020, 10 (10)
  • [4] Time-resolved kelvin probe force microscopy to study population and depopulation of traps in electron or hole majority organic semiconductors
    Moscatello, Jason P.
    Castaneda, Chloe V.
    Zaidi, Alyina
    Cao, Minxuan
    Usluer, Ozlem
    Briseno, Alejandro L.
    Aidala, Katherine E.
    ORGANIC ELECTRONICS, 2017, 41 : 26 - 32
  • [5] Probing the states around the charge neutrality point of reduced graphene oxide with time-resolved gated Kelvin Probe Force Microscopy
    Ragul, S.
    Dutta, Soumya
    Ray, Debdutta
    2022 IEEE INTERNATIONAL IOT, ELECTRONICS AND MECHATRONICS CONFERENCE (IEMTRONICS), 2022, : 572 - 578
  • [6] Time-resolved photo-assisted Kelvin probe force microscopy on Cu(In,Ga)Se2 solar cells
    Kuroiwa, Tomoe
    Takahashi, Takuji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SL)
  • [7] Surface Dynamics of Charge Transport in LaAlO3/SrTiO3 with Time-Resolved Kelvin Probe Force Microscopy
    Smith, Hugh
    Collins, Liam
    Sehirlioglu, Alp
    ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (01) : 206 - 216
  • [8] KELVIN PROBE FORCE MICROSCOPY
    NONNENMACHER, M
    OBOYLE, MP
    WICKRAMASINGHE, HK
    APPLIED PHYSICS LETTERS, 1991, 58 (25) : 2921 - 2923
  • [9] Use of Kelvin probe force microscopy to achieve a locally and time-resolved analysis of the photovoltage generated in dye-sensitized ZnO electrodes
    Beu, Max
    Klinkmueller, Kathleen
    Schlettwein, Derck
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (09): : 1960 - 1965
  • [10] Pulsed Force Kelvin Probe Force Microscopy
    Jakob, Devon S.
    Wang, Haomin
    Xu, Xiaoji G.
    ACS NANO, 2020, 14 (04) : 4839 - 4848