Optically pumped GaN-based vertical cavity surface emitting laser at room temperature

被引：0
|
作者：
Chu, JT [1 ]
Liang, WD [1 ]
Kao, CC [1 ]
Huang, HW [1 ]
Lu, TC [1 ]
Kuo, HC [1 ]
Wang, SC [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan
来源：
2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS | 2005年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The optically pumped lasing action at 414 nm was obtained from a GaN-based VCSEL with an InGaN multiple quantum wells and two dielectric DBRs fabricated by laser lift-off. The threshold pumping energy is 270 nJ at room temperature conditions.
引用
收藏
页码：166 / 167
页数：2
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