Improvement of dielectric and energy storage properties in Bi(Mg1/2Ti1/2)O3-modified (Na1/2Bi1/2)0.92Ba0.08TiO3 ceramics

被引:138
|
作者
Chen, Pan
Chu, Baojin [1 ]
机构
[1] Univ Sci & Technol China, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
Ferroelectric; Lead-free ceramics; Dielectric; Energy storage; ELECTRICAL-PROPERTIES; DENSITY; FERROELECTRICS; TEMPERATURE;
D O I
10.1016/j.jeurceramsoc.2015.09.029
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Dielectric materials with stable dielectric and energy storage properties at a high operating temperature are needed in many important applications, such as the capacitors used in the automotive and aerospace industries. Between T-d, the phase transition temperature from a ferroelectric phase to a high-temperature non-polar or weakly polar phase, and T-m, the maximum temperature of the dielectric constant, Na1/2Bi1/2TiO3-based ferroelectric materials exhibit a relatively small variation in their dielectric properties, a feature of this type of material. Here we will demonstrate that by incorporating Bi(Mg1/2Ti1/2)O-3 into Na1/2Bi1/2TiO3-based ceramics, the temperature range between T-d and T-m can be expanded, leading to a smaller variation of the dielectric and energy storage properties over a wider temperature range compared with the materials without modification. Bi(Mg1/2Ti1/2)O-3 modification can also greatly increase the discharge energy density and charge-discharge efficiency of the materials. The 10 mol% Bi(Mg1/2Ti1/2)O-3 modified (Na1/2Bi1/2)(0.92)Ba0.08TiO3 ceramics exhibit a small variation of dielectric constant and low loss from 100 degrees C to 400 degrees C. The materials also exhibit a high energy density (>2 J/cm(3)) and a high charge-discharge efficiency (>88%) at 120 degrees C. The energy density of the materials is almost independent of temperature from room temperature to 180 degrees C, which is attractive for high-temperature dielectric and energy storage applications. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:81 / 88
页数:8
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